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We study the tunneling conductance of nanoscale quantum “shuttles” in connection with a recent experiment [H. Park et al., Nature 407, 57 (2000)] in which a vibrating C60 molecule was apparently funct...
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linke...
Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a p...
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is sh...
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the forma-tion of distinct hot spots during operation. However, the average CNN temperature at breakdown is significan...
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far h...
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap...
Transport properties, spectral function and optical conductivity of the adiabatic one-dimensional Su-Schrieffer-Heeger (SSH) model are studied with particular emphasis on the model parameters suitable...
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage...
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to ...
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expec...
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...

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