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Incoherent dynamics of vibrating single-molecule transistors
Nanometer quantum island single electron transistor model dynamics
2014/12/20
We study the tunneling conductance of nanoscale quantum “shuttles” in connection with a recent experiment [H. Park et al., Nature 407, 57 (2000)] in which a vibrating C60 molecule was apparently funct...
Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
InP HBT LNA Modelling Transistor Small-signal modelling
2014/12/8
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency o...
Temperature dependence of frequency response characteristics in organic field-effect transistors
MIS capacitors frequency response organic compounds organic field effect transistors 8432Tt 8530Tv
2016/12/2
The frequency response characteristics of semiconductor devices play an essential role in the high-speed operation of electronic devices. We investigated the temperature dependence of dynamic characte...
Low-voltage organic thin-film transistors with polymeric nanocomposite dielectrics
Organic Nanoparticle Dielectrics Thin-film transistors
2011/11/24
High performance organic thin-film transistors (OTFTs) incorporated with high dielectric nanoparticles in the dielectric layers have been demonstrated. The dielectric insulator consists of cross-linke...
Organic thin-film transistors with reduced photosensitivity
Organic Photosensitivity Nanoparticle Dielectrics Thin-film transistors
2011/11/24
Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO2) nanoparticles into a p...
An in-plane gate transistor fabricated by using the atomic force microscopy (AFM) lithography is investigated in this paper. By performing repeated oxidation and de-oxidation procedures by using AFM f...
Hysteresis of Electronic Transport in Graphene Transistors
graphene transistor conductance hysteresis charge transfer capacitive gating water dipole
2010/11/17
Graphene field effect transistors commonly comprise graphene flakes lying on SiO2 surfaces. The
gate-voltage dependent conductance shows hysteresis depending on the gate sweeping rate/range. It is sh...
Imaging Dissipative Transport in Carbon Nanotube Network Transistors
Imaging Dissipative Transport Carbon Nanotube Network Transistors
2010/11/24
We use infrared thermometry of carbon nanotube network (CNN) transistors and find the forma-tion of distinct hot spots during operation. However, the average CNN temperature at breakdown is significan...
On the possibility of obtaining MOSFET-like performance and sub-60 mV/decade swing in 1D broken-gap tunnel transistors
obtaining MOSFET-like performance sub-60 mV/decade
2010/11/25
Tunneling field-effect transistors (TFETs) have gained a great deal of recent interest due to their potential to reduce power dissipation in integrated circuits. One major challenge for TFETs so far h...
Analysis of InAs Vertical and Lateral Band-to-Band Tunneling Transistors: Leveraging Vertical Tunneling for Improved Performance
InAs Vertical Lateral Band-to-Band Tunneling Transistors
2010/11/23
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap...
Transport Properties and Optical Conductivity of the adiabatic Su-Schrieffer-Heeger model: a showcase study for rubrene based field effect transistors
Transport Properties Optical Conductivity of the adiabatic Su-Schrieffer-Heeger model
2010/11/25
Transport properties, spectral function and optical conductivity of the adiabatic one-dimensional Su-Schrieffer-Heeger (SSH) model are studied with particular emphasis on the model parameters suitable...
Room Temperature Coherent and Voltage Tunable Terahertz Emission from Nanometer-Sized Field Effect Transistors
Room Temperature Coherent Voltage Tunable Terahertz Emission
2010/11/24
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-based high electron mobility transistors. The room temperature coherent gate-voltage...
Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field
Coulomb Oscillations Indium-doped ZnO Nanowire Transistors Magnetic Field
2010/11/9
We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to ...
Present status of amorphous In–Ga–Zn–O thin-film transistors
Present status amorphous In–Ga–Zn–O thin-film transistors
2010/10/12
The present status and recent research results on amorphous oxide semiconductors (AOSs) and their thin-film transistors (TFTs) are reviewed. AOSs represented by amorphous In–Ga–Zn–O (a-IGZO) are expec...
Effect of Carrier Concentration Dependant Mobility on the Performance of High Electron Mobility Transistors
High Electron Mobility Transistor diffusion part drain current
2010/4/15
The influence of the sheet carrier concentration dependence on mobility on the performance of High Electron Mobility Transistor (HEMT) structures is theoretically modeled. The model basically takes in...