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Taylor Expansion of Surface Potential in MOSFET: Application to Pao-Sah Integral
Taylor Surface Potential MOSFET Pao-Sah Integral
2010/12/3
We propose a simple model, derived from Pao-Sah theory, valid in all modes from weak to strong inversion, to calculate the drain current in Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ...
In this paper a software (MOSOFT) has been developed for 4-level simulation of MOSFETS. This software simulates the device characteristics up to micron channel length and includes long channel, short ...
By inclusion of a semi-dielectric layer, a novel MOSFET Structure, the T-MOSFET, and its integrated circuit version are presented. Both for the enhancement mode and the depletion mode, equivalent circ...
A Simple Distributed RGC Model of MOSFET for Pre-Pinch Off Region
A Simple Distributed RGC Model MOSFET Pre-Pinch Off Region
2010/12/21
The differential equation describing the small signal behavior of a MOSFET channel is derived. Based on the analogy of the channel to distributed transmission lines, which has been very well establish...