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东南大学电子科学与工程学院研究团队在圆片级柔性InP半导体晶体管器件制备和封装技术方面取得重要进展，相关研究成果于近日被国际半导体行业著名杂志《Semiconductor Today》以《Flexible indium phosphide DHBT frequency boost》为题进行专题报道。柔性电子技术是目前电子行业所关注的重要研究方向，可广泛应用于电子通信、显示、太阳能电池、可穿戴设备、...
Return Loss Analysis and Experimental Study of Semiconductor Optical Amplifiers
SOA Return loss Residual reflectivity External cavity.
2010/7/16
Return loss of single semiconductor optical amplifier (SOA) module has been analysed in the
paper. The external cavity formed by residual reflectivity of coupling pigtail fibers is the obstacle to in...
Optoelectronic Property of single Semiconductor Quantum Wire
semiconductor quantum wire terahertz field optoelectronics
2010/7/16
We theoretically study the optoelectronic property of a straight semiconductor quantum wire
partly irradiated under a transversely polarized external terahertz electromagnetic field at low temperatur...
Polarization-independent Semiconductor Optical Amplifier
semiconductor optical amplifier wavelength conversion
2010/7/15
Semiconductor Optical amplifier (SOA) has received more and more attention,especially with the rapid development of the optical networks. In this paper the progress on the polarization-independent SOA...
Integration of High-Power Semiconductor Lasers Using Dry-Etched Mirrors
High-Power Semiconductor Lasers Dry-Etched Mirrors
2010/7/15
Broad-area InGaAs-AlGaAs laser diodes emitting at a wavelength of 980 nm with dry-etched mirror facets are presented. The devices exhibit optical output powers up to 1.5W per facet at room temperature...
GaN Metal-insulator-semiconductor Field Effect Transistor Based on GaN/AlGaN/GaN Double Heterojunctions
GaN Metal-insulator-semiconductor Field EffectTransistorBased GaN/AlGaN/GaN Heterojunctions
2010/7/15
III-N is the most promising material for high-temperature, high-power electronic devices.
There have been many researches on GaN-based metal semiconductor FET (MESFETs). For many
applications, metal...
In this paper, progress in compound semiconductor devices and ICs is reviewed.Emphasis is laid on the status of the research and development in our institute in the areas such as GaAs very high speed ...
A 22% Efficient Semiconductor/Liquid Junction Solar Cell—the Photoelectrochemical Behavior of n-WSe2 Electrodes in the Presence of I2/I- in Aqueous Electrolyte
Aqueous Electrolyte n-WSe2 Electrodes the Photoelectrochemical Behavior Semiconductor/Liquid Junction Solar Cell
2010/12/21
One of the most efficient semiconductor/liquid-junction photoelectrochemical cells (PEC) reported to date is presented. It consists of a SeCl4-grown n-WSe2 single crystal anode, with a 3.1016 cm-3 con...