搜索结果: 1-12 共查到“电子科学与技术 determination”相关记录12条 . 查询时间(0.182 秒)
Study on determination of parasitic resistances in SiC MESFET’s
Extract the source drainage door parasitic resistance parasitic resistance resistance measurement
2014/12/31
This paper presents a simple analytical method for extracting the source, drain and gate parasitic resistances. The proposed method is based on the three simple DC measurements. The parasitic resistan...
Study of analytical determination of parasitic resistances in Gallium Nitride (GaN) MESFET'S
Analysis model gallium nitride metal semiconductor should the transistor drainage electrical parameters of the resistance
2014/12/31
In this project, a physics based analytical model is proposed for Gallium Nitride (GaN) based metal semiconductor field effect transistor (MESFET) by using MATLAB software. The analytical model has be...
Determination of autoregressive model orders for seizure detection
EEG seizure AR model stepwise least square algorithm
2010/10/12
In the present study, a step-wise least square estimation algorithm (SLSA), implemented in a Matlab package called as ARfit, has been newly applied to clinical data for estimation of the accurate Auto...
Determination of the Optimum Parameter Tolerances for Transducers: A Sensitivity Approach
Transducers Sensitivity Optimum parameter tolerances
2009/10/12
Transducers are essential system components used in the process control industry and also in many engineering areas. In this study, a method is proposed to determine the optimum parameter tolerances b...
Genetic Approach for the Determination of Object Parameters from X Ray Projections
Genetic Approach Object Parameters X Ray Projections
2009/7/27
In this study, a new method is presented, based on genetic algorithms for determining object parameters such as radii and/or attenuation coefficients with some assumptions and estimating a cross-secti...
Some Investigations on the Anisotropy of the Chemical Etching of (h k 0) and (h h I) Silicon Plates in a NaOH 35% Solution. Part III: Determination of a Database for the Simulator Tensosim and Prediction of 2D Etching Shapes
Silicon Anisotropic etching NaOH etchant Tensorial and kinematic model Simulator TENSOSIM
2010/12/7
The simulation of 2D etching shapes such as surface profiles and out-of-roundness profiles related to various (h k 0) and (h h l) silicon plates or cross-sections is studied. The theoretical basis of ...
A New Junction Parameters Determination Using the Double Exponential Model
Characteristic Junction Parameters Extraction Modeling
2010/12/7
A double exponential model is used to characterize the junction properties of microelectronic devices. A method is developed to extract the physical junction parameters from the current-voltage charac...
New Method for Determination of Drain Saturation Voltage in Short Channel MOS Devices Between Liquid Helium to Room Temperature
MOS transistor Drain saturation voltage Substrate current
2010/12/8
A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...
Diode Parameter Determination Applied to LDD-MOSFETs for Device Characterization
drain-substrate diode intrinsic parameters current-voltage characteristics
2010/12/10
The electrical properties of the drain-substrate diode of MOSFETs are shown to be related to the device geometrical structure. The two dimensional analysis takes into account the edge effects of the l...
Simulation of Open Circuit Voltage Decay for Solar Cell Determination of the Base Minority Carrier Lifetime and the Back Surface Recombination Velocity
Open Circuit Voltage Solar Cell the Base Minority Carrier Lifetime the Back Surface Recombination Velocity
2010/12/10
The Open Circuit Voltage Decay (OCVD) method for the determination of the base minority carrier lifetime (τ ) and the back surface recombination velocity (S) of silicon solar cells has been investigat...
Small-Signal and Noise Model Determination for Double Polysilicon Self-Aligned Bipolar Transistors
Noise Model Determination Double Polysilicon Self-Aligned Bipolar Transistors
2010/12/14
In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters ...
A Short Communication — Determination of Chip and Substrate Temperatures
Chip Substrate Temperatures electrical current thermal heat flow
2010/12/23
Through making use of the analogy between electrical current and thermal heat flow, thermal calculations for thick film substrates may be undertaken using standard computer aided design programs such ...