搜索结果: 1-6 共查到“电子科学与技术 SnO2”相关记录6条 . 查询时间(0.031 秒)
通过介电泳技术将敏感元件SnO2球形纳米颗粒定位到间距为20μm的Au叉指电极之间, 制备了一种相对湿度传感器. 从获得的I-V曲线可以看出, Au/SnO2/SnO2/Au组合结构具有良好的电导率. 通过自己设计的相对湿度测试系统 测试了其传感特性, 结果显示该湿度传感器具有高的敏感性及可重复性. 证明了运用介电泳方法所制备的湿度传感器在各种不同的湿度条件下, 都具有很好的稳定性, 即使是在非常...
A New Method for the Preparation of Fine-Grained SnO2 and WO3 Powders: Influence of the Crystallite Size on the Electrochemical Insertion of Li+ in SnO2 and WO3 Electrodes
Fine-Grained SnO2 and WO3 Powders the Electrochemical Li+ SnO2 and WO3 Electrodes
2010/12/14
We propose an unconventional method to obtain fine-grained SnO2 and WO3 powders. It uses as precursors, polymer complexes between polyethylene oxide (POE) and SnCl4 or WCl6 respectively. By pyrolysis ...
Influence of the pH Values of the Sol–Gel State on the Properties of SnO2 Powders Obtained From a Sol–Gel Route
the pH Values the Sol–Gel State SnO2 Powders a Sol–Gel Route
2010/12/14
The evolution of the specific surface area and crystallite size of SnO2 powders, prepared from a sol-gel process, was studied as a function of the calcination temperature of the stannic hydroxyde coll...
Reversible Electrochemical Insertion of Lithium in Fine Grained Polycrystalline Powders of SnO2
Lithium Grained Polycrystalline Powders SnO2
2010/12/14
Fine grained SnO2 powders have been obtained using an unconventional method. It deals with the well known polymerization method starting from the metallic halide SnCl4 with polyethylene oxide (PEO). W...
Optical and Electrical Properties of SnO2:F Thin Films Obtained by R.F. Sputtering With Various Targets
SnO2 F Thin Films R.F Various Targets
2010/12/16
Tin oxide films were deposited on glass substrates by reactive and non reactive r.f. sputtering using different types of targets corresponding to various Sn/F atomic ratio: hot pressed Sn–SnF2 or SnO2...
High Temperature Oxidized SnO2 Films Prepared by Reactive Sputtering
d.c. reactive ion an argon atmosphere oxygen partial pressures
2010/12/21
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the t...