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Temperature Dependence of the Raman Intensity and the Bandwidth Close to the Order-Disorder Phase Transition in NaNO3
Raman Intensity Bandwidth NaNO3
2013/1/30
We analyze the temperature dependence of the Raman intensity using the experimental data according to a power-law formula close to the order-disorder transition (Tc = 549 K) in NaNO 3. From this analy...
Electrically Driven Nonreciprocity Induced by Interband Photonic Transition on a Silicon Chip
Electrically Driven Nonreciprocity Induced Interband Photonic Transition Silicon Chip
2015/8/7
We demonstrate electrically driven nonreciprocity on a silicon chip. By achieving an indirect interband photonic transition, we show that the transmission coefficients between two single-mode wa...
Control of parameters in rare earth- transition metal alloys for magneto-optical recording media
2011/12/1
The techniques which can be used to control the magnetic and occurs when the temperature in the heated spot increasesufficiently magneto-optical recording properties of sputtered amorphous thin films ...
Broad angle and frequency tunable photoniccrystal-polarization beam splitterbased on negative refraction:Transition from right-handedto left-handed medium
negative refraction photonic crystals negative index medium equi-frequency surface
2011/5/5
A new design of a broad angle photonic crystal polarization beam splitter (PhC-PBS) with
frequency tunable index of refraction, i.e. varying from positive to negative, is presented.
Designed PhC-PBS...
The Transition to Chip-level Optical Interconnects
Optical Interconnects Photonic Integrated Circuits
2015/6/8
The increasing bandwidth demands of computing chips have spawned significant research into chip-scale photonic interconnects. We review the DARPA-sponsored efforts at the inter- and intra-chip interco...
All-Optical Wavelength Conversion at 160Gb/s by Intersubband Transition Switches Utilizing Efficient XPM in InGaAs/AlAsSb Coupled Double Quantum Well
Wavelength Conversion Coupled Double Quantum Well
2015/7/14
We report all-optical wavelength conversion of 160-Gb/s signal by intersubband transition switches with signal pulse energy as low as sub-pJ, which is enabled by newly designed InGaAs/AlGaAs/AlAsSb co...
Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays
Subwavelength Hole Arrays Semiconductor
2008/10/31
We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transitio...
All Optical Demultiplexing from 160 to 40-Gb/s Utilizing InGaAs/AlAsSb Quantum Well Intersubband Transition Switch
InGaAs/AlAsSb Quantum Well Intersubband Transition Switch
2015/8/4
We demonstrated all optical demultiplexing from 160 to 40-Gb/s by intersubband transition switch. This was enabled by quantum well with high XPM efficiency and bi-directional pump configuration.
Excited 1u(51P1) state of Cd2 and the dipole moment of the 1u(51P1)–X0g+ electronic transition
Cd2 interatomic potentials
2011/5/3
The satellite band of the 228.8 nm Cd line associated with the 1u(51P1)–X0g+ electronic transition in Cd2 is measured in absorption and used for probing and correcting the excited state potential by m...