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Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers
gallium nitride HEMT
2011/5/4
AlGaN/GaN heterostructures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers were characterized electrically by capacitance-voltage measurements and chemically by Auger microscopy chemical in-depth pro...
Structural changes in sodium-calcium-silicate glass after adding Si3N4
synthesis of oxide-nitride glasses
2011/5/3
Structural changes in sodium-calcium-silicate glass after adding Si3N4 (silicon nitride) were investigated. The research included the use of the atom radial decomposition functions (RDF) and infrared ...