搜索结果: 1-9 共查到“光学工程 Photodiodes”相关记录9条 . 查询时间(0.152 秒)
A W-Band Photonic Transmitter-Mixer Based on High-Power Near-Ballistic Uni-Traveling-Carrier Photodiodes for BPSK and QPSK Data Transmission Under Bias Modulation
Photonic QPSK Data Abstract
2011/11/17
THE tremendous increase in the required volume of wireless data-transmission has stimulated attention on ways to use the millimeter-wave (MMW) bands above 60 GHz ( -band) or above 100 GHz ( -band) as ...
High Performance Ge/Si Avalanche Photodiodes Development in Intel
Photodetectors Optical communications
2015/5/26
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically int...
We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm ...
Using a Microcontroller to Optimize the Bias Voltage of Balanced Photodiodes to Minimize Even-Order Distortion in Analog Fiber-Optic Links
Radio frequency photonics Photodiodes Fiber optic links subsystems
2015/6/4
Use of a microcontroller-based bias board for balanced photodiodes improves even-order distortion cancellation due to voltage dependent responsivity nonlinearities.The bias board improves the second o...
The development of the 1.27 μm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)
Avalanche photodiodes Optical communications
2015/6/4
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Photodiodes with Monolithically Integrated Wilkinson Power Combiner
Photonic integrated circuits Photodetectors
2015/6/4
We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the ...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2015/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications
Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes
2015/7/20
We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported ( I dM =0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and ...
Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2015/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.