搜索结果: 1-10 共查到“凝聚态物理学 GaAs”相关记录10条 . 查询时间(0.046 秒)
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Direct correlation of crystal structure optical properties
2010/11/25
A novel method for the direct correlation at the nanoscale of structural and optical properties
of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zi...
Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field
Atomistic theory spin relaxation zero magnetic field
2010/11/25
We present full atomistic calculations of the spin-flip time (T1) of electrons and holes mediated by acoustic phonons in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field. At lo...
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Spin orbital mechanisms of the magneto-gyrotropic photogalvanic effects
2010/11/24
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE)in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Land´e-factor g...
Electronic correlations in short period (CrAs)$_n$/(GaAs)$_n$ ferromagnetic heterostructures
Electronic correlations ferromagnetic heterostructures
2010/11/24
We investigate half-metallicity in [001] stacked (CrAs)n/(GaAs)n heterostructures with n ≤ 3
by means of a combined many-body and electronic structure calculation. Interface states in the
presence o...
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Non-linear behavior of Eg(T) Zero-point energy Temperature dependence of the gap Gallium arsenide
2010/6/30
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigati...
用赝势微扰法计算某些半导体的能带结构(用于GaAs,GaP和Ga[As1-xPx]合金)
2007/12/12
用赝势微扰法计算了GaAs,GaP和Ga[As1-xPx]合金的能带。赝势选择的原则是使计算所得直接能隙和间接能隙与实验值相符合。计算结果表明,不但能带次序准确,而且与室温下的实验值符合得很好。基于由GaAs到GaP晶格常数和赝势是线性变化的假设,计算了GaP含量为20％,50％和80％时Ga[As1-xPx]合金的能带。当GaP含量为41％时,直接能隙和间接能隙相等,这一数值刚好是Spitzer...
专著信息
书名
Recrystallization behavior of high-dose Mn -implanted GaAs
语种
英文
撰写或编译
作者
Wang J.Q.,Li Z.F.,Cai W.Y.,Miao Z.L,Chen X.S.,Lu W
第一作者单位
出版社
APPLIED PHYSICS A76, 975-978 (2003)
出版地
出版日期
2003年
月
日
标...
用无限深势阱和有限深势阱2种模型，计算了激子束缚能与球形量子点半径的关系.计算结果表明：对于无限深势阱模型，量子点中激子束缚能随着量子点的半径增加而减小；对于有限深势阱模型，当量子点半径较小时，束缚能随着量子点的半径增加而增加；当量子点半径增加到一定值时，它的束缚能达到最大值，继续增加量子点半径，束缚能反而减少.这些计算结果对深入理解半导体量子点中激子的物理本质具有一定学术意义.
Structural Analysis of a GaAs/AlxGa1-x As Hot Electron Light Emitter Using Double Axis X-Ray Diffraction
X-ray diffraction structural analysis semiconductor devices hot electrons LED
2010/4/13
We report on interference peaks in double axis x-ray rocking curves of tunable wavelength hot electron light emitters. The device is based on a p-GaAs and n-Ga1-xAlxAs heterojunction containing an inv...