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利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, ...
Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si
Metal-oxide-semiconductor quasi-static
2010/4/15
Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V ch...