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兰州大学热学课件第二章 气体动理学理论的基本概念03
兰州大学 热学 课件 第二章 气体动理学理论的基本概念03
2009/8/26
兰州大学热学课件第二章 气体动理学理论的基本概念03。
兰州大学热学课件第二章 气体动理学理论的基本概念02
兰州大学 热学 课件 第二章 气体动理学理论的基本概念02
2009/8/26
兰州大学热学课件第二章 气体动理学理论的基本概念02。
兰州大学热学课件第二章 气体动理学理论的基本概念01
兰州大学 热学 课件 第二章 气体动理学理论的基本概念01
2009/8/26
兰州大学热学课件第二章 气体动理学理论的基本概念01。
吴仲华奖励基金开展第二届评审
吴仲华奖励基金 第二届
2009/7/24
2009年7月22日，“吴仲华奖励基金”第二届评审会在中科院工程热物理研究所召开，全体基金理事会成员参会，理事会理事长、工程热物理研究所所长秦伟主持会议。
Transport property measurements of Bi2Se3 crystal grown by Bridgman method
Crystal growth transport properties thermoelectric materials atomic force microscopy
2010/4/8
This paper deals with the growth of Bi2Se3 crystal by newly designed experimental set-up of Bridgman technique in our laboratory. Grown crystal is characterized by EDAX (Energy Dispersive Analysis of ...
Molecular Dynamics Study of Thermal Properties of Intermetallic Alloys
Molecular dynamics Sutton-Chen potential intermetallic alloys thermophysical properties
2010/4/9
Molecular dynamics simulations of bulk copper, gold pure metals and their ordered intermetallics alloys of Cu3Au(L12) and CuAu3(L12) have been carried out between above 0 K and below the their melting...
Photovoltaic Properties of n-(ZnS)X(CdTe)1-X/p-Si
Photovoltaic properties n-(ZnS)x(CdTe)1-x/p-Si Hetrojunction solar cells thermal evaporation technique efficiency ideality factor
2010/4/9
Hetrojunction solar cells n-(ZnS)x(CdTe)1-x/p-Si, with Al, In and Au as front grid contacts, have been fabricated by thermal evaporation technique. Their photovoltaic properties and the forward I-V ch...
Using two dimensional numerical codes, we show that the direct electron heating found with electron cyclotron emission (ECE) radiometry is related to local Alfv´en wave resonances in Tokamak Cha...
High-temperature Thin-catalytic Gate Devices for Combustion Emissions Control
High-temperature Thin-catalytic Gate Combustion Emissions Control
2010/10/21
4H- and 6H-SiC Schottky diodes responding down to 5 ppm of NO and NO2 gases at temperatures up to 450oC were fabricated. Upon exposure to gas, the forward current of the devices changes due to variati...