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The Quantum Boltzmann Equation in Semiconductor Physics
Nonequilibrium kinetics excitons,plasma Bose-Einstein condensation
2010/11/23
The quantum Boltzmann equation, or Fokker-Planck equation, has been used to successfully explain a number of experiments in semiconductor optics in the past two decades. This paper reviews some of the...
Ferromagnetism in Dilute Magnetic Semiconductors
Ferromagnetism Dilute Magnetic Semiconductors
2010/11/23
Ferromagnetism in Dilute Magnetic Semiconductors.
Optical Dielectric Functions of III-V Semiconductors in Wurtzite Phase
Optical Dielectric Functions III-V Semiconductors Wurtzite Phase
2010/11/22
Optical properties of semiconductors can exhibit strong polarization dependence due to crystalline anisotropy. A number of recent experiments have shown that the photoluminescence intensity in free st...
Direct observation of band-gap closure for a semiconducting carbon nanotube in a large parallel magnetic field
Direct observation of band-gap closure semiconducting carbon nanotube large parallel magnetic field
2010/11/23
We have investigated the magnetoconductance of semiconducting carbon nanotubes (CNTs) in
pulsed, parallel magnetic elds up to 60 T, and report the direct observation of the predicted band-gap closur...
Spin exchange interaction with tunable range between graphene quantum dots
Spin exchange interaction tunable graphene quantum dots
2010/11/22
We study the spin exchange between two electrons localized in separate quantum dots in graphene.The electronic states in the conduction band are coupled indirectly by tunneling to a common continuum o...
Existence of vertical spin stiffness in Landau-Lifshitz-Gilbert equation in ferromagnetic semiconductors
Existence of vertical spin stiffness ferromagnetic semiconductors
2010/11/18
We calculate the magnetization torque due to the spin polarization of the itinerant electrons by deriving the kinetic spin Bloch equations based on the s-d model. We find that the first-order gradient...
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
Double quantum dot enhancement-mode silicon lateral geometry
2010/11/17
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances show that the device...
Semiconductor quantum ring as a solid-state spin qubit
Semiconductor quantum ring solid-state spin qubit
2010/11/19
The implementation of a spin qubit in a quantum ring occupied by one or a few electrons is proposed. Quantum bit involves the Zeeman sublevels of the highest occupied orbital. Such a qubit can be init...
Giant Stark effect in the emission of single semiconductor quantum dots
Giant Stark effect single semiconductor quantum dots
2010/11/19
We study the quantum-confined Stark effect in single InAs/GaAs quantum dots embedded within a AlGaAs/GaAs/AlGaAs quantum well. By significantly increasing the barrier height we can observe emission fr...
Possibility of the Effect of Anisotropic Transparency in Semi-Conductor Structures
cond-mat stat-mech Statistical Mechanics
2010/11/25
The present paper examines the possibility of asymmetric effect of the adjacent to barrier physically different media, or anisotropic structure of the barrier itself, on probability of the oppositely ...
Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate
graphene Raman spectroscopy scanning tunneling microscopy (STM)
2010/11/22
Using micro-Raman spectroscopy and scanning tunneling microscopy, we study the relationship between structural distortion and electrical hole doping of graphene on a silicon dioxide substrate. The obs...
Imaging Stacking Order in Few-Layer Graphene.
Nonequilibrium free energy, H theorem and self-sustained oscillations for Boltzmann-BGK descriptions of semiconductor superlattices
Nonequilibrium processes Boltzmann equation current fluctuations
2010/11/22
Semiconductor superlattices (SL) may be described by a Boltzmann-Poisson kinetic equation with a Bhatnagar-Gross-Krook (BGK) collision term which preserves charge, but not momentum or energy.
Effect of p-d hybridization and structural distortion on the electronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors
A. Chalcopyrite A. Semiconductors E. Density Functional Theory E. TB-LMTO
2010/11/18
We have carried out ab-initio calculation and study of structural and elec-tronic properties of AgAlM2 (M = S, Se, Te) chalcopyrite semiconductors using Density Functional Theory (DFT) based self cons...
Graphene: from materials science to particle physics
Graphene materials science particle physics
2011/1/13
Since its discovery in 2004, graphene, a two-dimensional hexagonal carbon allotrope, has generated great interest and spurred research activity from materials science to particle physics and vice vers...