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Parametric Studies of Pulsed Nd:YAG Laser Deposition of ITO for OLED Application
Indium tin oxide Pulsed Nd:YAG laser Background gases OLED
2009/6/1
Device-quality ITO by pulsed Nd:YAG laser, successfully used for Organic Light Emitting Device (OLED), was deposited at room temperature and 250 °C. Although the optical transmittance of > 90% is achi...
Feasibility of Fabrication of Heteroepitaxial Gex Si1-x/Si(111) structure by Pulsed Nd: YAG Laser
Heteroepitaxial Gex Si1-x/Si(111) Pulsed Nd: YAG Laser
2010/4/15
Heteroepitaxial Gex Si1-x alloy layers have been formed by 10 ms and 300 m s laser pulse induced mixing of pure germanium films and Si(111) substrates where Ge films of thickness (500-1250) Å ar...