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Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation
Thin films ITO ARE
2010/7/8
Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for fi...
Deposited indium-tin-oxide (ITO) transparent conductive films by reactive low-voltage ion plating (RLVIP) technique
ITO film RLVIP Optical transmittance Infrared reflectance Sheet resistance
2011/12/7
Indian-tin-oxide ITO transparent conductive films were deposited by the Reactive low-voltage ion plating (RLVIP) technique. CO2 and O2 gases were used as reactive gases coming into the vacuum. The eff...
The effect of the ion beam energy on the properties of indium tin oxide thin films prepared by ion beam assisted deposition
ITO Thin film Polycarbonate Ion beam assisted deposition
2011/12/19
Indium tin oxide (ITO) thin films have been deposited onto polycarbonate substrates by ion beam assisted deposition technique at room temperature. The structural, optical and electrical properties of ...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...