搜索结果: 1-7 共查到“Ge-on-Si”相关记录7条 . 查询时间(0.223 秒)
Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ~1.55 μm
silicon detectors Optoelectronics Photodetectors
2015/5/26
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high se...
利用固源分子束外延(SSMBE)生长技术, 在Si(111)衬底上预沉积不同厚度(0、0.2、1 nm)Ge, 在衬底温度900 ℃, 生长SiC单晶薄膜. 利用反射式高能电子衍射仪(RHEED)、原子力显微镜(AFM)和傅立叶变换红外光谱(FTIR)等实验技术, 对生长的样品进行了研究. 结果表明, 预沉积少量Ge(0.2 nm)的样品, SiC薄膜表面没有孔洞存在, AFM显示表面比较平整, ...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2015/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Ge-on-Si Photodetectors for Optical Communications
Ge-on-Si Photodetectors Optical Communications
2015/7/17
Ge-on-Si waveguide integrated photodetectors including Metal-Semiconductor-Metal (MSM), vertical PIN and lateral PIN diodes are reviewed.
Ge-on-Si Photodetectors with 33 GHz Bandwidth Implemented by RPCVD
Photodetectors Bandwidth Implemented RPCVD
2015/7/31
We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 μ m-diameter at a wavelength of 1550 nm.
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
2007/7/28
期刊信息
篇名
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
语种
日文
撰写或编译
撰写
作者
Xiying Ma,Baohe Yuan,Zhijun Yan
第一作者单位
绍兴文理学院
刊物名称
Optics Communications
页面...
Properties of MOS Capacitors Produced on SiGe Formed by Ge-implanted Si
Metal-oxide-semiconductor quasi-static
2010/4/15
Metal-oxide-semiconductor (MOS) capacitors fabricated on Ge-implanted Si have been investigated by using C-V and G-V measurements. The control sample on pure Si substrate yielded normal C-V and G-V ch...