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A new method for drain saturation voltage extraction in submicron MOSFETs is presented. It is based on measurements of the partial derivative of the impact ionization rate. The method has been tested ...
The construction method of the sensor SRTS with two roundshaped diffusion layers is given. The effect of geometry on the sensor resistance is determined theoretically. An approximating method is given...
Substituting glass by SiO2 in thick film resistors results in a small increase of R□, a decrease of dR□/dT and an increase of d2R□/dT2 (at room temperature). From these experimental results it follows...
Undoped and Sb-doped tin oxide films were prepared by d.c. reactive ion sputtering in an argon atmosphere with oxygen partial pressures ranging from 0 to 50%. The films were anneled in oxygen in the t...
Standard thick film resistor pastes exhibit changes in their electrical characteristics when printed on top of dielectric layers. Of particular interest is the inherent change in their temperature coe...
In some experiments on improving the electrical properties of the thick film resistors, we have found that some, the TCRs of which are nearly zero, can be made easily by doping with MnO: the conductiv...
Measurements have been made of resistivity as a function of temperature in the range 290 to 600°K for vacuum deposited NiCr thin films subjected to different heat treatments in air. While the films p...
This paper presents results of the investigations concerning thick-film sensors of temperature and humidity. Main criteria have been discussed and design programs computed by the ODRA computer in the ...

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