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In this paper, noise characterization and modeling of a double polysilicon self-aligned bipolar transistor are presented. The device has been characterized in terms of noise and scattering parameters ...
In this communication, an accurate mathematical model for the noise figure of a high electron mobility transistor is developed. This model represents a substantial improvement of the Fukui model. In f...
Knowledge on the conduction mechanism of thick film resistors are limited and often contradictory.In this paper investigations based on temperature dependent 1/f noise measurements are reported.
In this paper a sensitive measuring circuit is described for the measurement of current noise on high quality thin and thick film resistors. Measured data on resistors are presented and analysed.

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