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New paths were designed for the investigations of the-tin!Imma!sh phase transitions in nanocrystalline Ge under conditions of hydrostatic stress. A second-order transition between the-tin andImmapha...
A Discussion on the Phonon Density of States of Amorphous Germanium for the Infrared Range
Phonon density of states amorphous germanium infrared range quasiharmonic approximation
2010/12/10
A theoretical formulation for the phonon density of states of amorphous germanium in the infrared range is proposed. This formulation is based upon the quasi-harmonic approximation and is compared wit...
A Small Cluster Approach for the Electronic Density of States in Amorphous Germanium
Electronic density of states amorphous germanium bonding orbitals Born model
2010/12/10
The electronic density of states for very small clusters of amorphous germanium is calculated by using bonding orbitals. In this context, the Born model is considered as well as Pauling-type hybridize...
Physical Properties of Sputtered Germanium-Doped Indium Tin Oxide Films (ITO: Ge) Obtained at Low Deposition Temperature
Sputtered Germanium-Doped Indium Tin Oxide Films Low Deposition Temperature
2010/12/16
Undoped and Ge-doped ITO films (ITO: Ge) deposited at low temperature (70℃) have been studied. Although both samples have the same carrier concentration, a higher carrier mobility occurs for ITO: Ge. ...