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Progress in high-responsivity vertical-illumination type Ge-on-Si photodetecor operating at λ ~1.55 μm
silicon detectors Optoelectronics Photodetectors
2015/5/26
We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high se...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2015/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Ge-on-Si Photodetectors for Optical Communications
Ge-on-Si Photodetectors Optical Communications
2015/7/17
Ge-on-Si waveguide integrated photodetectors including Metal-Semiconductor-Metal (MSM), vertical PIN and lateral PIN diodes are reviewed.
Ge-on-Si Photodetectors with 33 GHz Bandwidth Implemented by RPCVD
Photodetectors Bandwidth Implemented RPCVD
2015/7/31
We report Ge-on-Si photodetectors fabricated by RPCVD showing 3-dB bandwidth of 33 GHz for the window size of 20 μ m-diameter at a wavelength of 1550 nm.
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
2007/7/28
期刊信息
篇名
The photodetector of Ge nanocrystals/Si for 1.55 um operation deposited by pulsed laser deposition
语种
日文
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撰写
作者
Xiying Ma,Baohe Yuan,Zhijun Yan
第一作者单位
绍兴文理学院
刊物名称
Optics Communications
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