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Effect of annealing temperature on the morphology of ohmic contact Ti/Al/Ni/Au to n-AlGaN/GaN heterostructures
ohmic contacts heterostructure AlGaN/GaN heterostructure
2011/5/10
Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good surface morphology are required for the development of high temperature, high power and high frequency electron...
Capacitance-voltage and Auger chemical profile studies on AlGaN/GaN structures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers
gallium nitride HEMT
2011/5/4
AlGaN/GaN heterostructures passivated by SiO2/Si3N4 and SiNx/Si3N4 bilayers were characterized electrically by capacitance-voltage measurements and chemically by Auger microscopy chemical in-depth pro...