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Since emerging in 1960, the artificial hydrogels have garnered enormous attentions in scientific community due to their high level of similarities to biological soft tissues in both structures and pro...
Heterostructures formed by different three-dimensional semiconductors form the foundation for modern electronic and photonic devices. Now, University of Washington scientists have successfully combine...
Photonic crystal heterostructures containing two materials and/or two lattice constants are synthesized using the colloids of polystyrene and polymethyl methacrylate by a self-assembling technique. Th...
The fabrication of photonic crystal heterostructures is important for the applications in the fields of integrated photonic crystal chips and multi-frequency optical Bragg filters or mirrors; here we ...
Rapidly growing attention is being directed to the investigation of ionic conductivity in oxide film heterostructures. The main reason for this interest arises from interfacial phenomena in these hete...
We consider coherent thermal conductance through multilayer photonic crystal heterostructures, consisting of a series of cascaded nonidentical photonic crystals. We show that thermal conductance can b...
In this review, we consider the application of solid micro- and nanostructures of various shapes as building blocks for micro-electro-mechanical or nano-electro-mechanical systems (MEMS/NEMS). We prov...
This paper addresses some physical aspects and presents experimental results concerning to phenomena which evoke modification of band structure in lattice mismatched InGaAs/GaAs heterostructures, name...
Ohmic contacts to AlGaN/GaN heterostructures which have low contact resistance and good surface morphology are required for the development of high temperature, high power and high frequency electron...
In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric cor...
The Ga, Al and In nitrides (AIII–N) are complete material system suitable in high power and high temperature electronic devices such as AlxGa1–xN/GaN heterostructure field effect transistor (HFET). Th...
Characteristics of optical gratings on Si/SiGe heterostructures for optical band-pass filters will be discussed. The bandwidth can be down to 0.1 nm. By reducing the refractive index of the SiGe layer...

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