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A W-Band Photonic Transmitter-Mixer Based on High-Power Near-Ballistic Uni-Traveling-Carrier Photodiodes for BPSK and QPSK Data Transmission Under Bias Modulation
Photonic QPSK Data Abstract
2011/11/17
THE tremendous increase in the required volume of wireless data-transmission has stimulated attention on ways to use the millimeter-wave (MMW) bands above 60 GHz ( -band) or above 100 GHz ( -band) as ...
High Performance Ge/Si Avalanche Photodiodes Development in Intel
Photodetectors Optical communications
2015/5/26
Ge/Si avalanche photodiodes with record high gain-bandwidth and sensitivity for communication wavelength and high data rate, 10Gbps and 40Gbps, is demonstrated. These devices can be monolithically int...
We report novel InGaAs/InP modified uni-traveling carrier photodiodes with record linearity. At low frequencies the third-order output intercept point (OIP3) is 55 dBm and remains as high as 47.5 dBm ...
Using a Microcontroller to Optimize the Bias Voltage of Balanced Photodiodes to Minimize Even-Order Distortion in Analog Fiber-Optic Links
Radio frequency photonics Photodiodes Fiber optic links subsystems
2015/6/4
Use of a microcontroller-based bias board for balanced photodiodes improves even-order distortion cancellation due to voltage dependent responsivity nonlinearities.The bias board improves the second o...
The development of the 1.27 μm high responsivity AlInAs Avalanche Photodiodes for 10G-EPON (OLT)
Avalanche photodiodes Optical communications
2015/6/4
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
Photodiodes with Monolithically Integrated Wilkinson Power Combiner
Photonic integrated circuits Photodetectors
2015/6/4
We report improved output power and linearity characteristics of two InP/InGaAs partially-depleted-absorber photodiodes monolithically integrated with a Wilkinson power combiner and stub tuner in the ...
Ge on Si p-i-n Photodiodes for a Bit Rate of up to 25 Gbit/s
Ge on Si p-i-n Photodiodes Bit Rate
2015/7/20
Ge on Si p-i-n photodiodes are characterized on wafer in the time domain at a wavelength of 1550 nm.The photodiode output signal is sampled by a flip flop. At a bit rate of 25 Gbit/s and a Pseudo Rand...
Very Low Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes for 10Gb/s applications
Dark Current AlInAs/GaInAs SAGM Avalanche Photodiodes
2015/7/20
We report a planar AlInAs/GaInAs APD presenting simultaneously the lowest multiplied dark current ever reported ( I dM =0.19nA), a responsivity of 0.9A/W (at M=1), a very low noise (F(M=10)=3.3), and ...
Silicon Lateral Avalanche Photodiodes Fabricated by Standard 0.18 μm CMOS Process
Avalanche Photodiodes Fabricated CMOS Process
2015/7/17
A Si APD was fabricated by standard 0.18 μ m CMOS process. The maximum avalanche gain was 224 for only 8 V bias. The bandwidth was 1.6 GHz for low avalanche gain and 800 MHz for large avalanche gain.
In this paper an equivalent circuit of a GaAs PIN photodiode for the millimeter wave range is proposed. Moreover, an approximate expression for the bandwidth of this circuit is obtained. By using the ...
In this paper, various contributions concerning generalized photodiodes and ITO photodiodes are reported. In particular, calculations related to the bandwidth of the equivalent circuit ot a PIN photod...
This paper is devoted to the analysis of the Plasma-Optical Effect in GaAs PIN photodiodes operating at the infrared range. An approximated expression for the variation of the refractive index in the ...