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借助石墨烯实现Si（100）衬底上单晶GaN薄膜的外延生长（图）
石墨烯 Si（100）衬底 单晶GaN薄膜 外延生长
2019/10/12
近日，北京大学物理学院宽禁带半导体研究中心沈波和杨学林课题组与俞大鹏、刘开辉课题组合作，成功实现了Si(100)衬底上单晶GaN薄膜的外延生长，相关工作于2019年7月23日在Advanced Functional Materials上在线刊登 [doi.org/10.1002/adfm.201905056]。GaN基宽禁带半导体具有带隙大、击穿电场高、饱和电子漂移速度大等优异，能够满足现代电子技...
Potential Performance of SiC and GaN Based Metal Semiconductor Field Effect Transistors
Ballistic transport frequency response Steady-state Drain current
2010/7/5
A Monte Carlo simulation has been used to model steady-state electron transport in SiC and GaN field effect transistor. The simulated device geometries and doping are matched to the nominal parameters...
Electrons and Phonons in GaN Semiconductor Quantum Well Devices
Electrons Phonons GaN Semiconductor Quantum Well Devices
2010/4/16
Electrons and polar optical phonons and their interactions are considered in the context of semiconductor quantum well devices, with particular reference to real quantum well laser structures. Distinc...