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Quantum Theory for Interfacial Roughness and Angle
Dependence of Giant Magnetoresistance in Magnetic Multilayers
giant magnetoresistance
interfacial roughness angle dependence Green's function
magnetic multilayers
2007/8/15
2001Vol.35No.3pp.355-359DOI:
Quantum Theory for Interfacial Roughness and Angle
Dependence of Giant Magnetoresistance in Magnetic Multilayers
TAO Yong-Chun, DONG Zheng-Chao, XING ...
Anisotropic Interface Roughness Scattering in a Lateral
Superlattice
interface roughness lateral
superlattice correlation function anisotropic conductivity
2007/8/15
2004Vol.42No.2pp.303-308DOI:
Anisotropic Interface Roughness Scattering in a Lateral
Superlattice
ZHENG Yi-Song, LÜ Tian-Quan, and ZHANG Cheng-Xiang
Department of P...
Surface Roughness Evolution under Constant Amplitude Fatigue Loading Using Crystal Plasticity
2007/7/28
期刊信息
篇名
Surface Roughness Evolution under Constant Amplitude Fatigue Loading Using Crystal Plasticity
语种
英文
撰写或编译
作者
ZF Yue
第一作者单位
刊物名称
Engineering Fracture Mechanics
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出版日期
年
月
日
文章标识(ISSN)
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Surface Roughness of Thin Gold Films and its Effects on the Proton Energy Loss Straggling
Ion Scattering Atomic Force Microscopy Self supported thin films
2010/9/29
We present a description of the effect of the surface roughness on the energy straggling associated to the energy loss distributions of protons transmitted through a self supported metallic thin foil....
Interface Roughness-Induced Intrassubband Scattering in a Quantum Well Under an Electric Field
interface roughness intersubband
2010/4/13
The scattering rates in the lowest subband in a quantum well are calculated for interface roughness scattering when an electric field is applied perpendicular to the layer plane. It is found that the ...
Well-width dependence of warm electron relaxation and interface roughness scattering in GaAs/Ga1-xAlxAs multiple quantum wells
two-dimensional energy-loss rates Shubnikov-de Haas
2010/4/16
We review our recent results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of two-dimensional (2D) warm electrons in modulation-doped GaAs/Ga1-xAlxAs multiple ...
Electron Transport in GaAs Quantum Wells: Effect of Interface Roughness Scatterin
interface roughness electron transport
2010/4/16
The importance of interface roughness (IFR) scattering of electrons and LO-phonons for electron transport in semiconductor quantum wells is discussed. Modulation doping of quantum wells minimizes the ...