搜索结果: 1-15 共查到“物理学 GaAs”相关记录83条 . 查询时间(0.14 秒)
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究
GaAs/AlGaAs 量子阱 热红外 转换焦 平面材料
2023/8/31
GaAs/AlGaAs量子阱热红外上转换焦平面材料研究。
GaAs微尖上碳纳米管的制备
碳纳米管 热化学气相沉积 GaAs 选择液相外延
2013/9/28
采用热化学气相沉积的方法在选择性液相外延方法制备的GaAs微尖上生长碳纳米管。利用扫描电子显微镜以及拉曼光谱对生长的碳纳米管进行表征。结果表明:GaAs微尖在高温下重新结晶成条状梯形GaAs阵列,生长的碳纳米管连接在相邻的GaAs阵列之间,形态规整,具有较好的石墨微晶结构。在此基础上,提出在微尖上生长纳米管的模型,为实现微纳器件互联提供了一种新方法。
基于GaAs MMIC技术的残余应力测试结构的模拟与设计
GaAs 残余应力 应力梯度 实验验证
2014/4/23
残余应力对开关梁的力学特性有着重要的影响。梁的弹性系数k由梁的形状和材料特性（杨氏模量和残余应力）来决定。应力梯度会使悬臂梁发生卷曲，对k也会产生影响。由残余应力引起的梁的长度变化量在微米级别，一般实验仪器难于测量。基于GaAs基和Si基的器件残余应力不同，相应的测试结构需重新设计。为了克服这些问题，本论文重新模拟并优化了微旋转式残余应变测试结构，尽量简化对测试仪器的要求。本文使用Intellis...
太赫兹场作用下的GaAs 双量子阱的光吸收分析
光吸收谱 量子阱 太赫兹
2012/11/23
用密度矩阵理论分析了在超快脉冲及太赫兹场作用下GaAs量子阱和双量子阱的光吸收谱.分析表明：在直流和太赫兹场作用下，由于量子约束斯塔克效应，光吸收谱呈现出多个激子吸收峰.改变太赫兹的强度和频率，吸收谱出现恶歇分裂，并产生边带，这些分裂主要来源于太赫兹作用下激子的非线性效应.
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
Direct correlation of crystal structure optical properties
2010/11/25
A novel method for the direct correlation at the nanoscale of structural and optical properties
of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zi...
Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
Electric-field Manipulation Self-assembled Quantum Dots
2010/11/25
The effect of an electric field on spin precession in In0.5Ga0.5As/GaAs self-assembled quantum
dots is calculated using multiband real-space envelope-function theory. The dependence of the Land´...
Atomistic theory of spin relaxation in self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots at zero magnetic field
Atomistic theory spin relaxation zero magnetic field
2010/11/25
We present full atomistic calculations of the spin-flip time (T1) of electrons and holes mediated by acoustic phonons in self-assembled In1−xGaxAs/GaAs quantum dots at zero magnetic field. At lo...
Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices
Local spin valve effect lateral (Ga,Mn)As/GaAs spin Esaki diode devices
2010/11/19
We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor
all-electrical spin injection devices, employing p+−(Ga,Mn)As/n+−GaAs Esaki diode structure...
Spin and orbital mechanisms of the magneto-gyrotropic photogalvanic effects in GaAs/AlGaAs quantum well structures
Spin orbital mechanisms of the magneto-gyrotropic photogalvanic effects
2010/11/24
We report on the study of the linear and circular magneto-gyrotropic photogalvanic effect (MPGE)in GaAs/AlGaAs quantum well structures. Using the fact that in such structures the Land´e-factor g...
Electronic correlations in short period (CrAs)$_n$/(GaAs)$_n$ ferromagnetic heterostructures
Electronic correlations ferromagnetic heterostructures
2010/11/24
We investigate half-metallicity in [001] stacked (CrAs)n/(GaAs)n heterostructures with n ≤ 3
by means of a combined many-body and electronic structure calculation. Interface states in the
presence o...
Cotunneling effects in GaAs vertical double quantum dot
Cotunneling effects GaAs vertical double quantum dot
2010/11/24
Semiconductor quantum dots have been a subject of intensive investigation over last two
decades. One reason is the proposal [1] to use spin state of electron in a quantum dot as a
quantum bit of inf...
Comparison of some theoretical models for fittings of the temperature dependence of the fundamental energy gap in GaAs
Non-linear behavior of Eg(T) Zero-point energy Temperature dependence of the gap Gallium arsenide
2010/6/30
In this work we report on a comparison of some theoretical models usually used to fit the dependence on temperature of the fundamental energy gap of semiconductor materials. We used in our investigati...
不同变掺杂结构GaAs光电阴极的光谱特性分析
GaAs光电阴极 变掺杂 内建电场 量子效率
2010/2/4
为定量研究变掺杂结构对阴极量子效率的作用效果，设计生长了两种不同掺杂方式的反射式梯度掺杂GaAs光电阴极，激活后测量了两者的光谱响应曲线。将光谱响应曲线转换为对应的量子效率曲线，对不同入射光波段的量子效率进行了拟合分析，得到了体现变掺杂结构贡献程度的变掺杂系数K值。研究发现，同一阴极材料对不同波段的入射光，其掺杂结构产生的作用效果各不相同。同时，不同掺杂结构光电阴极对于相同波段范围内的入射光，其作...
GaAs晶体生长缺陷的正电子湮没研究
正电子湮没 长缺陷 GaAs晶体
2009/8/17
本文介绍用正电子湮没寿命和多普勒加宽技术研究750—950°掺Te液相外延生长的和1238℃熔体生长的GaAs晶体生长缺陷. 在800—1238℃生长的晶体中都观测到312±11ps的寿命组分τ2, 其强度I2, 多普勒加宽S参加和按捕获模型计算的平均寿命τ都随晶体生长温度增高而增大. 在掺Te外延晶体中, 312ps寿命的正电子陷阱浓度随晶体生长温度增高而线性地增大, 在熔体生长晶体中, 该陷阱...
Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells
GaAs/Ge solar cells displacement damage dose carbon ion proton irradiation
2009/8/14
Displacement damage dose is applied to analyze the irradiation effects of 2 MeV carbon ions and 0.28~20 MeV protons on homemade GaAs/Ge solar cells. The NIEL for each ion is modified by taking into a...